Features include gate oxide stability, according to the company, which “observed no shift in threshold voltage even after 100,000 pulses in repetitive un-clamped inductive switching [R-UIS] tests. R-UIS tests also indicated avalanche ruggedness and stability in other parameters.
They also have a “degradation-free body diode”, said Microchip, which can replace an external diode. Short-circuit withstand capability is “comparable to IGBTs”.
Applications are foreseen in two-level charger topologies, displacing IGBTs for heavy vehicles, electric buses and other battery-powered commercial vehicles.
